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Freescale Semiconductor Technical Data
Document Number: MRF7S21170H Rev. 5, 4/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 31% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output Power * Pout @ 1 dB Compression Point w 170 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21170HR3 MRF7S21170HSR3
2110 - 2170 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF7S21170HR3
CASE 465C - 02, STYLE 1 NI - 880S MRF7S21170HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 170 W CW Case Temperature 73C, 25 W CW Symbol RJC Value (2,3) 0.31 0.36 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
MRF7S21170HR3 MRF7S21170HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 372 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.72 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 0.9 703 -- -- pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4.5 0.1 2 2.7 5.4 0.15 2.7 -- 6.5 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 15 29 5.7 -- -- 16 31 6.1 - 37 - 15 18 -- -- - 35 -9 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S21170HR3 MRF7S21170HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 170 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 170 W CW Average Group Delay @ Pout = 170 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 170 W CW f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- 25 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.4 1.95 1.7 18 0.015 0.01
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS
Z17 VSUPPLY + R2 C1 C2 Z7 C8 C10 C12 C13
R3 RF INPUT Z1 C3 C5 C6 C4 Z2 Z3 Z4 Z5 Z6 Z8
Z9 Z10 Z11 Z12 Z13 Z14 Z15 RF Z16 OUTPUT
C17
DUT C14 Z18 C15 C16
C18
C7
C9
C11
Z1 Z2* Z3* Z4* Z5* Z6 Z7 Z8 Z9 Z10
0.250 x 0.083 Microstrip 0.090 x 0.083 Microstrip 0.842 x 0.083 Microstrip 0.379 x 0.083 Microstrip 0.307 x 0.083 Microstrip 0.156 x 0.787 Microstrip 1.160 x 0.080 Microstrip 0.119 x 0.787 Microstrip 0.077 x 0.880 Microstrip 0.459 x 1.000 Microstrip
Z11 Z12* Z13* Z14* Z15* Z16 Z17, Z18 PCB
0.060 x 0.760 Microstrip 0.129 x 0.083 Microstrip 0.436 x 0.083 Microstrip 0.490 x 0.083 Microstrip 0.275 x 0.083 Microstrip 0.230 x 0.083 Microstrip 0.900 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r =2.55
* Variable for tuning
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2, C3, C7, C8, C17, C18 C4, C15 C5 C6 C9, C10, C11, C12 C13 C14 C16 R1, R2 R3 Description 100 pF Chip Capacitor 6.8 pF Chip Capacitors 0.3 pF Chip Capacitors 0.8 pF Chip Capacitor 0.2 pF Chip Capacitor 10 F Chip Capacitors 470 F, 63 V Electrolytic Capacitor, Radial 0.4 pF Chip Capacitor 0.1 pF Chip Capacitor 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number ATC100B101JT500XT ATC100B6R8BT500XT ATC100B0R3BT500XT ATC100B0R8BT500XT ATC100B0R2BT500XT C5750X5R1H106MT 477KXM063M ATC100B0R4BT500XT ATC100B0R1BT500XT CRCW12061002FKEA CRCW120610R0FKEA Manufacturer ATC ATC ATC ATC ATC TDK Illinois Capacitor ATC ATC Vishay Vishay
MRF7S21170HR3 MRF7S21170HSR3 4 RF Device Data Freescale Semiconductor
R2 R1 C1 C2 C8
C13
C10 C12 R3
C4
C17
CUT OUT AREA
C3
C5
C6
C14
C15
C16
C18
C9
C11
C7
MRF7S21170H Rev 0
Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 17 16 Gps, POWER GAIN (dB) 15 14 13 IRL 12 11 10 PARC D VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps 36 34 32 30 28 PARC (dB) 0 -1 -2 -3 2220
-5 -10 -15 -20 -25
9 2060
2080
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg.
D, DRAIN EFFICIENCY (%) 17 16 Gps Gps, POWER GAIN (dB) 15 14 13 12 11 10 PARC 9 2060 2080 2100 2120 2140 2160 2180 2200 -5 2220 IRL D VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 40 38 36 PARC (dB) -2 -3 -4 44 42
-5 -10 -15 -20 -25
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 84 Watts Avg.
18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2100 mA 17 Gps, POWER GAIN (dB) 1750 mA 16 1400 mA 1050 mA -10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20 2100 mA IDQ = 700 mA -40 1400 mA -50 1050 mA -60 1 10 100 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 1750 mA
-30
15
14 13
700 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S21170HR3 MRF7S21170HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, IDQ = 1400 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 0 -10 -20 IM3-L -30 -40 -50 IM5-L -60 1 10 TWO-TONE SPACING (MHz) 100 IM5-U IM3-U VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz
-20
-30
-40 3rd Order -50 5th Order -60 1 10 7th Order 100 400
IM7-U
IM7-L
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON THE CCDF (dB) 0 -1 -2 -3 -3 dB = 83.111 W -4 -5 20 -1 dB = 43.335 W -2 dB = 61.884 W
Figure 8. Intermodulation Distortion Products versus Tone Spacing
54 Ideal D, DRAIN EFFICIENCY (%) 48 42 36 30 Actual 24 18 120
VDD = 28 Vdc, IDQ = 1400 mA f = 2140 MHz, Input Signal PAR = 7.5 dB 40 60 80 100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc) -20 -30 19 VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single-Carrier W-CDMA, Input Signal PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth Uncorrected, Upper and Lower DPD Corrected No Memory Correction -50 -30_C Gps, POWER GAIN (dB) 18 17 16 15 14 DPD Corrected, with Memory Correction -70 40 13 41 42 43 44 45 46 47 48 49 50 1 10 100 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1400 mA f = 2140 MHz Gps TC = -30_C 25_C 85_C 25_C 85_C 40 30 20 10 0 400 50 D, DRAIN EFFICIENCY (%) 60
-40
-60
D
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
17 IDQ = 1400 mA f = 2140 MHz Gps, POWER GAIN (dB) 16 MTTF (HOURS) VDD = 24 V 13 0 100 200 280 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 50 W Avg., and D = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 107 108
15
106
14
Figure 12. Power Gain versus Output Power
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -10 -20 -30 -40 -50 -60 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21170HR3 MRF7S21170HSR3 8 RF Device Data Freescale Semiconductor
Zo = 10 f = 2220 MHz Zload Zsource f = 2060 MHz f = 2220 MHz f = 2060 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 4.57 - j10.70 4.57 - j10.38 4.57 - j10.06 4.52 - j9.72 4.40 - j9.42 4.15 - j9.12 4.44 - j8.82 4.19 - j8.53 4.12 - j8.23 Zload W 1.02 - j3.54 0.99 - j3.34 0.96 - j3.14 0.93 - j2.94 0.92 - j2.76 0.91 - j2.59 0.89 - j2.42 0.88 - j2.25 0.88 - j2.09
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61 60 Pout, OUTPUT POWER (dBm) 59 58 57 56 55 54 53 52 51 32 33 34 35 36 Actual VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW 12 sec(on), 10% Duty Cycle, f = 2140 MHz 37 38 39 40 41 42 43 44 P1dB = 52.75 dBm (188 W) P3dB = 53.56 dBm (226 W) P6dB = 53.89 dBm (244 W) Ideal Pout, OUTPUT POWER (dBm)
62 61 60 59 58 57 56 55 54 53 52 33 34 35 36 P1dB = 53.54 dBm (226 W) Actual VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW 12 sec(on), 10% Duty Cycle, f = 2140 MHz 37 38 39 40 41 42 43 44 45 P3dB = 54.65 dBm (290 W) P6dB = 54.88 dBm (307 W) Ideal
Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource P3dB 4.43 - j11.85 Zload 0.81 - j2.87 P3dB
Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource 4.43 - j11.85 Zload 0.72 - j2.87
Figure 17. Pulsed CW Output Power versus Input Power @ 28 V
Figure 18. Pulsed CW Output Power versus Input Power @ 32 V
MRF7S21170HR3 MRF7S21170HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRF7S21170HR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF7S21170HSR3
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date May 2006 June 2006 * Initial Release of Data Sheet * Added Class C to description of parts, pg. 1 * Changeded "" to " - " in the Device Output Signal Par bullet, pg. 1 * Changed typ value from 9 to 18 in Part - to - Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2 * Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7 2 3 Aug. 2006 Sept. 2006 * Added Greater Negative Source bullet to Features section, p. 1 * Corrected Fig. 14, Single - Carrier W - CDMA Spectrum, to 3.84 MHz, p. 7 * Changed "Capable of Handling" bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1 * Added "Insertion" to Part - to - Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2 * Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical Performances, p. 2 * Corrected Z6 value from "0.119" to "0.156", corrected Z8 value from "0.156" to "0.119", corrected Z9 value from "0.770" to "0.077", corrected Z11 value from "0.076" to "0.760", Fig. 1, Test Circuit Schematic, p. 3 * Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations and Values, p. 3 * Added Figure 10, Digital Predistortion Correction, p. 6 * Corrected Fig. 15, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7 * Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9 * Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9 4 May 2007 * Removed "Designed for Digital Predistortion Error Correction Systems" bullet as functionality is standard, p. 1 * Added "Optimized for Doherty Applications" bullet to Features section, p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 1 * Removed footnote and "Measured in Functional Test" from the RF test condition voltage callout for VGS(Q), and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2 * Updated verbiage in Typical Performances table, p. 3 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4 * Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 7 * Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8 * Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, updated to include output power level at functional test, p. 8 5 Apr. 2008 * Corrected On Characteristics table ID value for VGS(th) from 270 Adc to 372 Adc and VDS(on) from 2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production test values, p. 2 * Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 * Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, to better represent production test signal, p. 8 Description
MRF7S21170HR3 MRF7S21170HSR3 12 RF Device Data Freescale Semiconductor
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MRF7S21170HR3 MRF7S21170HSR3
Document Number: RF Device Data MRF7S21170H Rev. 5, 4/2008 Freescale Semiconductor
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